A pseudomorphic GaInP/InP MESFET with improved device performance

Author

Lin, K.C. ; Hsin, Y.M. ; Chang, C.Y. ; Chang, E.Y.

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2361

Lastpage

2362

Abstract

A high-bandgap GaInP epitaxial material grown on InP to increase the Schottky barrier height of the InP MESFET is discussed. The Schottky gate materials used in this study were Au and Pt₂Si. The pseudomorphic GaInP/InP MESFET with an Au gate has a Schottky barrier height of 0.54 eV, and the reverse leakage current of the device is 10 ^-2 times lower than that of the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET are 66.7 and 104.2 mS/mm respectively for the 5-μm-gate-length GaInP/InP MESFET

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium compounds; indium compounds; semiconductor-metal boundaries; 0.54 eV; 104.2 mS/mm; 5 micron; 66.7 mS/mm; Au gate; Au-GaInP-InP; Pt₂Si gate; Pt₂Si-GaInP-InP; Schottky barrier height; device performance; high-bandgap GaInP epitaxial material; pseudomorphic GaInP/InP MESFET; reverse leakage current; transconductance; Epitaxial growth; FETs; Gold; High-speed electronics; Indium phosphide; Leakage current; MESFETs; Photonic band gap; Schottky barriers; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249488

Filename

249488