Modifications to MOS transistor model CASMOS for increased accuracy of DC simulations of heavily channel-doped n-MOS devices

The absence of certain bulk charge terms from the CASMOS model equations leads to a reduced accuracy in the simulation of long-channel n-MOS devices which have channel-doping concentrations > 1×1016 cm¿3 This reduction in accuracy is proportional to gate length. The bulk charge terms responsible for this effect are identified and the model equations modified accordingly.