Title :
TDEG in In0.53Ga0.47As-InP heterojunction grown by chloride VPE
Author :
Komeno, J. ; Takikawa, M. ; Ozeki, M.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
We report the first successful growth of selectively doped In0.53Ga0.47As-InP hcterojunctions by the chloride vapour phase epitaxy, and the observation of TDEG with a maximum electron mobility of 106 000 cm2 V¿1 s¿1 at 4.2 K.
Keywords :
III-V semiconductors; carrier mobility; electron gas; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; III-V semiconductors; In0.53Ga0.47As-InP heterojunction; TDEG; VPE; chloride vapour phase epitaxy; electron mobility; selective doping; semiconductor growth; two dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830321
