Title :
Contacts between amorphous metals and semiconductors
Author :
Kelly, Michael J. ; Todd, A.G. ; Sisson, M.J. ; Wickenden, D.K.
Author_Institution :
GEC Research Laboratories, Hirst Research Centre, Wembley, UK
Abstract :
The letter describes the relative enhancement of the thermal stability of Schottky barriers on both silicon and gallium arsenide that can be achieved using thin films of amorphous Ni-Nb and Ta-Ir alloy, the latter alloy being among the most stable fabricated to date, with less than 5% degradation of the barrier height after 2.5 h at 500°C.
Keywords :
III-V semiconductors; Schottky effect; elemental semiconductors; gallium arsenide; iridium alloys; metallic glasses; metallic thin films; metallisation; nickel alloys; niobium alloys; semiconductor-metal boundaries; silicon; tantalum alloys; GaAs; Ni-Nb; Schottky barriers; Si; Ta-Ir alloy; amorphous metals; metallic glasses; metallisation; semiconductors; thermal stability enhancement; thin films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830322
