DocumentCode
986146
Title
Ultrafast GaAs microwave PIN diode
Author
Tayrani, R. ; Glew, R.W.
Author_Institution
GEC Research Laboratories, Hirst Research Centre, Wembley, UK
Volume
19
Issue
13
fYear
1983
Firstpage
479
Lastpage
480
Abstract
This letter describes what is believed to be the first successful realisation of GaAs PIN diodes. The vertical structure was grown on an n+ substrate by MOCVD of a 2 ¿m, 1015 cm¿3 unintentionally doped n¿ layer followed by a 0.3 ¿m, 4×1019 cm¿3 Zn doped p+ layer. The isolation and insertion loss of a single shunt-mounted device are typically ¿27 dB and 0.7 dB, respectively. The switching speed of the device was measured to be less than 1 ns.
Keywords
III-V semiconductors; gallium arsenide; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; GaAs; III-V semiconductors; MOCVD; VPE; Zn doped p+-layer; epitaxial growth; insertion loss; isolation loss; microwave p-i-n diode; n+-substrate; shunt-mounted device; switching speed; unintentionally doped n--layer; vertical structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830325
Filename
4247806
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