Regrowth of amorphous layers in silicon-on-insulator structures formed by the implantation of oxygen

Synthesised silicon-on-insulator structures have been formed and implanted with 1×1016 As+ cm¿2 at 40 keV. The regrowth kinetics of the amorphised layer, which also contains lattice defects and excess oxygen, has been studied by Rutherford backscattering. The regrowth of the layer occurs at a mean rate of 13 Å min¿1 at 500°C with an activation energy of 2.7±0.2 eV. This experiment further demonstrates the suitability of these synthesised structures as a direct replacement for bulk silicon in VLSI technology.