Title :
Amorphous-silicon FET array for LCD panel
Author :
Katoh, Kentaroh ; Yasui, Motoaki ; Kuniyasu, S. ; Watanabe, H
Author_Institution :
Stanley Electric Co., Research & Development Laboratory, Yokohama, Japan
Abstract :
A small 20 × 20 dot matrix array of a FET has been fabricated on a glass substrate using a-Si films as the semiconductor and silicon nitride deposited from a N2-SiH4 mixture as the gate insulator. Good operation is obtained for both TN-mode and GH-mode in transparent-type LCDs. The improved fabrication process and structure are reported.
Keywords :
amorphous semiconductors; elemental semiconductors; insulated gate field effect transistors; liquid crystal displays; silicon; thin film circuits; thin film transistors; 20*20 dot matrix array; GH-mode; Si3N4 gate insulator; TN-mode; a-Si films; amorphous Si FET array; fabrication process; glass substrate; guest-host mode; liquid crystal display panel; semiconductor; twisted nematic mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830344
