• DocumentCode
    986370
  • Title

    Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

  • Author

    Asahi, H. ; Kawamura, Yuriko ; Noguchi, Y. ; Matsuoka, T. ; Nagai, Hiroto

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
  • Volume
    19
  • Issue
    14
  • fYear
    1983
  • Firstpage
    507
  • Lastpage
    509
  • Abstract
    InGaAsP/InP distributed-feedback (DFB) lasers operating at 1.5 ¿m have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.5 micron wavelength; InGaAsP/InP DFB lasers; LPE/MBE; distributed-feedback lasers; hybrid growth technique; liquid phase epitaxy; molecular beam epitaxy; semiconductor laser; single-longitudinal-mode operation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830345
  • Filename
    4247835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986370