Performance and reliability of poly-Si TFTs on FSG buffer layer

Author

Wang, Shen De ; Chang, Tzu Yun ; Chien, Chao Hsin ; Lo, Wei Hsiang ; Sang, Jen Yi ; Lee, Jam Wen ; Lei, Tan Fu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

467

Lastpage

469

Abstract

A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.

Keywords

buffer layers; fluorine; leakage currents; semiconductor device reliability; silicon compounds; thin film transistors; FSG buffer layer; Si; Si-F bonds; field-effect mobility; fluorinated silicate oxide; fluorine concentration; hot carrier stressing; leakage current; poly-Si TFT; polycrystalline silicon TFT; thin film transistor; Atomic layer deposition; Buffer layers; Chaos; Chemical vapor deposition; Glass; Grain boundaries; Leakage current; Silicon; Substrates; Thin film transistors; Buffer layer; fluorinated silicate oxide (FSG); fluorine; polycrystalline silicon thin-film transistors (poly-Si TFTs); reliability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.851242

Filename

1458958