DocumentCode
986687
Title
100 GHz bandwidth planar GaAs Schottky photodiode
Author
Wang, S.Y. ; Bloom, D.M.
Author_Institution
Hewlett-Packard Laboratories, Palo Alto, USA
Volume
19
Issue
14
fYear
1983
Firstpage
554
Lastpage
555
Abstract
In the letter we report the development and characterisation of a planar-structure GaAs Schottky-barrier photodiode whose response to a mode-locked laser pulse of 600 nm wavelength has a full-width half-maximum of 5.4 ps and a 3 dB bandwidth of 100 GHz.
Keywords
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; photodiodes; 100 GHz bandwidth; 600 nm wavelength; full-width half-maximum; mode-locked laser pulse; planar GaAs Schottky photodiode; semiconductor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830376
Filename
4247868
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