Title :
Electrical measurements on silver-diffused InP
Author :
Tuck, Brian ; Chaoui, R.
Author_Institution :
University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
Abstract :
Electrical measurements were made on n-type InP before and after diffusion with silver. No change was observed in the electron concentration and it is proposed that most of the silver atoms in the bulk were in the form of positive interstitial ions, giving rise to deep donor states.
Keywords :
III-V semiconductors; carrier density; deep levels; diffusion in solids; electrical conductivity of crystalline semiconductors and insulators; indium compounds; Ag diffusion; III-V semiconductors; deep donor states; electron concentration; n-InP; positive interstitial ions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830385
