• DocumentCode
    986791
  • Title

    Thermally accelerated degradation of 1.3 ¿m BH lasers

  • Author

    Nakano, Yoshiaki ; Fukuda, Motohisa ; Sudo, H. ; Fujita, O. ; Iwane, G.

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
  • Volume
    19
  • Issue
    15
  • fYear
    1983
  • Firstpage
    567
  • Lastpage
    568
  • Abstract
    An investigation has been made into the thermally accelerated degradation in ACC lifetests for 1.3 ¿m BH lasers. The CW threshold current under high-stress aging has been evaluated at various temperatures. An increase in the CW threshold current was observed which could be represented as a combination of two linear variations. It was found that the rapid increase of the CW threshold current was dependent on the evaluation temperature, which could be an important parameter in assessing the degradation of InGaAsP lasers.
  • Keywords
    III-V semiconductors; ageing; gallium arsenide; indium compounds; life testing; 1.3 microns; ACC lifetests; CW threshold current; III-V semiconductors; InGaAsP lasers; buried heterostructure; high-stress aging; thermally accelerated degradation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830386
  • Filename
    4247881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986791