DocumentCode
986837
Title
A Gm-C low-pass filter for zero-IF mobile applications with a very wide tuning range
Author
Chamla, David ; Kaiser, Andreas ; Cathelin, Andreia ; Belot, Didier
Author_Institution
IEMN/ISEN, Lille, France
Volume
40
Issue
7
fYear
2005
fDate
7/1/2005 12:00:00 AM
Firstpage
1443
Lastpage
1450
Abstract
A third-order Gm-C Butterworth low-pass filter implementing Gm-tuning and Gm-switching to maximize the tuning range is described. This filter is intended to be used as a channel-selection/anti-aliasing filter in the analog baseband part of a zero-IF radio receiver architecture for multimode mobile communications. Its Gm-switching feature allows extending the tuning range and adapting the power consumption. The filter´s cutoff frequency ranges from 50 kHz to 2.2 MHz. An Input IP3 of up to +18 dBVp is achieved, for a total worst-case power consumption of 7.3 mW for both I and Q paths, and an effective area of less than 0.5 mm2 in a 0.25-μm SiGe BiCMOS process. A new figure of merit is introduced for comparison of published low-pass tunable filters including noise, linearity, and tuning range.
Keywords
BiCMOS analogue integrated circuits; Butterworth filters; circuit tuning; continuous time filters; low-pass filters; mobile communication; radio receivers; radiofrequency filters; 0.050 to 2.2 mHz; 0.25 micron; 3G standards; 7.3 mW; BiCMOS; CMOS analog integrated circuits; Gm-C filter; Gm-switching; Gm-tuning; SiGe; active third-order Butterworth filter; analog baseband filter; anti-aliasing filter; channel selection; continuous-time filter; intermodulation-free dynamic range; linear transconductor; low-pass filter; low-pass tunable filters; multimode mobile communications; multimode transceiver; power consumption; reconfigurable filters; total harmonic distortion; triode transconductor; tuning range; zero-IF radio receiver architecture; zero-IF transceiver; Baseband; BiCMOS integrated circuits; Cutoff frequency; Energy consumption; Germanium silicon alloys; Low pass filters; Mobile communication; Receivers; Silicon germanium; Tuning; 3G standards; Active third-order Butterworth filter; CMOS analog integrated circuits; SiGe BiCMOS process; analog baseband filter; continuous-time filter; figure of merit; intermodulation-free dynamic range; large tuning range; linear transconductor; low-pass filter; multimode transceiver; reconfigurable filter; total harmonic distortion; triode transconductor; tunable low-pass filter; zero-IF transceiver;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2005.847274
Filename
1458987
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