• DocumentCode
    986994
  • Title

    Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers

  • Author

    Kolahdouz, Mohammadreza ; Hallstedt, J. ; Khatibi, Ali ; Ostling, Mikael ; Wise, Rick ; Riley, Deborah J. ; Radamson, Henry

  • Author_Institution
    Sch. of Inf. & Commun. Technol., R. Inst. of Technol. (KTH), Stockholm
  • Volume
    8
  • Issue
    3
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    291
  • Lastpage
    297
  • Abstract
    The influence of chip layout and architecture on the pattern dependency of selective epitaxy of B-doped SiGe layers has been studied. The variations of Ge-, B-content, and growth rate have been investigated locally within a wafer and globally from wafer to wafer. The results are described by the gas depletion theory. Methods to control the variation of layer profile are suggested.
  • Keywords
    Ge-Si alloys; boron; epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; SiGe:B; chip architecture; chip layout; gas depletion theory; growth rate; layer profile variation; pattern dependency; selective epitaxy; Loading effect; SiGe; pattern dependency; selective epitaxy;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2008.2009219
  • Filename
    4671122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986994