Title :
Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
Author :
Kolahdouz, Mohammadreza ; Hallstedt, J. ; Khatibi, Ali ; Ostling, Mikael ; Wise, Rick ; Riley, Deborah J. ; Radamson, Henry
Author_Institution :
Sch. of Inf. & Commun. Technol., R. Inst. of Technol. (KTH), Stockholm
fDate :
5/1/2009 12:00:00 AM
Abstract :
The influence of chip layout and architecture on the pattern dependency of selective epitaxy of B-doped SiGe layers has been studied. The variations of Ge-, B-content, and growth rate have been investigated locally within a wafer and globally from wafer to wafer. The results are described by the gas depletion theory. Methods to control the variation of layer profile are suggested.
Keywords :
Ge-Si alloys; boron; epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; SiGe:B; chip architecture; chip layout; gas depletion theory; growth rate; layer profile variation; pattern dependency; selective epitaxy; Loading effect; SiGe; pattern dependency; selective epitaxy;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2008.2009219
