DocumentCode
987108
Title
GaInAs/InP large bandwidth (> 2 GHz) PIN detectors
Author
Pearsall, T.P. ; Logan, R.A. ; Bethea, C.G.
Author_Institution
Bell Laboratories, Murray Hill, USA
Volume
19
Issue
16
fYear
1983
Firstpage
611
Lastpage
612
Abstract
Ga0.47In0.53As/InP heterophotodiodes are demonstrated with a bandwidth greater than 2 GHz, less than 0.5 pF capacitance, and subnanoampere dark current at the operating bias. These photodiodes satisfy criteria for both low noise and high speed in the 1 MHz¿2 GHz bit-rate range for optical fibre telecommunications
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; Ga0.47In0.53As/InP heterophotodiodes; III-V semiconductors; bandwidth; capacitance; optical fibre telecommunications; p-i-n diode detectors; photodetectors; subnanoampere dark current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830416
Filename
4247912
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