DocumentCode :
987202
Title :
Applicability of Charge Pumping on Germanium MOSFETs
Author :
Martens, K. ; Kaczer, B. ; Grasser, T. ; De Jaeger, B. ; Meuris, M. ; Maes, H.E. ; Groeseneken, G.
Author_Institution :
IMEC vzw, Interuniv. Microelectron. Center, Heverlee
Volume :
29
Issue :
12
fYear :
2008
Firstpage :
1364
Lastpage :
1366
Abstract :
In this letter, the charge-pumping (CP) technique is validated for germanium MOSFETs. Effects of the smaller Ge bandgap on CP are discussed through both experiments and simulations. The standard CP setup with ~ 100-ns transition times at room temperature tuned for Si/SiO2 MOS evaluates the Ge interface-trap density only near midgap, and the total density is thus strongly underestimated. We show two CP methods which can be used to correctly reflect the actual complete interface-trap density by probing closer to the band edges. The use of low-temperature measurements to probe traps near the band edges with CP is discussed. CP measurements are demonstrated with transition times down to 6-ns at 300-K without making use of RF structures. Using these fast measurements, it is possible to obtain an interface state density closer to the band edges for Ge MOSFETs at 300-K.
Keywords :
MOSFET; germanium; interface states; silicon compounds; Ge; Si-SiO2; charge-pumping technique; germanium MOSFET; interface state density extraction; temperature 300 K; time 6 ns; Charge pumps; Density measurement; Germanium; Interface states; MOSFETs; Photonic band gap; Probes; Radio frequency; Silicon; Substrates; Charge pumping (CP); Ge MOSFET; electrical characterization; interface state density extraction;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2007582
Filename :
4671149
Link To Document :
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