The Charge Plasma P-N Diode

Author

Hueting, Raymond J E ; Rajasekharan, Bijoy ; Salm, Cora ; Schmitz, Jurriaan

Author_Institution

MESA+ Inst. for Nanotechnol., Twente Univ., Enschede

Volume

29

Issue

12

fYear

2008

Firstpage

1367

Lastpage

1369

Abstract

A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e., a charge plasma p-n diode is formed in which no doping is required. Simulation results reveal a good rectifying behavior for well-chosen gate workfunctions and device dimensions. This concept could be applied for other semiconductor devices and materials as well in which doping is an issue.

Keywords

p-i-n diodes; plasma applications; rectifiers; semiconductor device models; semiconductor doping; silicon-on-insulator; Si; charge plasma P-N diode; doping; electron plasma; gate workfunctions; hole plasma; lowly doped silicon body; rectifier concept; rectifying behavior; semiconductor devices; Charge carrier processes; Plasma devices; Plasma materials processing; Plasma simulation; Rectifiers; Semiconductor device doping; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Silicon; Charge plasma (CP); MOS devices; current; semiconductor device modeling; simulation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2006864

Filename

4671154