• DocumentCode
    987359
  • Title

    Negative differential resistance in GaAs MESFETs

  • Author

    Fjeldly, T.A. ; Johannesson, J.S.

  • Author_Institution
    University of Trondheim, Norwegian Institute of Technology, Electronics Research Laboratory, Trondheim, Norway
  • Volume
    19
  • Issue
    17
  • fYear
    1983
  • Firstpage
    649
  • Lastpage
    650
  • Abstract
    The occurrence of stationary domains and negative differential resistance in GaAs MESFETs is shown to be favoured for a certain range of combinations of pinch-off voltage, gate voltage and saturation voltage. Outside this range the transistor either shows instability or normal JFET behaviour. The predictions are in good agreement with available experimental data.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; negative resistance; GaAs MESFETs; III-V semiconductors; gate voltage; negative differential resistance; pinch-off voltage; saturation voltage; stationary domains;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830441
  • Filename
    4247940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987359