DocumentCode :
987490
Title :
Electroplated Au-GaAs1¿xPx and Au-Ga1¿xAlxAs Schottky barriers
Author :
L¿¿pez-Coronado, M. ; Aguilar, Mario ; Mart¿¿nez, M.T. ; Calleja, E. ; Mu¿¿oz, E.
Author_Institution :
Universidad Politécnica de Madrid, Departmento de Instrumentación Electrónica, ETS Ingenieros de Telecomunicación, Madrid, Spain
Volume :
19
Issue :
17
fYear :
1983
Firstpage :
666
Lastpage :
668
Abstract :
A novel technique based on pulse electroplating and surface treatment with very slow etching rate solutions has been applied to fabricate Au Schottky barriers on GaAs1¿xPx and Ga1¿xAlxAs. Device characteristics are compared to the behaviour of vacuum-deposited barriers. The present technique allows a simple and fast procedure to obtain Schottky barriers for material evaluation and device applications.
Keywords :
Schottky effect; electroplating; etching; semiconductor-metal boundaries; Au-Ga1-xAlxAs Schottky barriers; Au-GaAs1-xPx Schottky barriers; device applications; etching rate solutions; material evaluation; pulse electroplating; surface treatment;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830454
Filename :
4247953
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=987490
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