• DocumentCode
    987543
  • Title

    Equivalent circuit for a GaAs CCD

  • Author

    Pennathur, S. ; Kwok, H.H.L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
  • Volume
    140
  • Issue
    6
  • fYear
    1993
  • fDate
    12/1/1993 12:00:00 AM
  • Firstpage
    377
  • Lastpage
    382
  • Abstract
    An equivalent circuit model was proposed for the charge transfer mechanisms in a GaAs charge coupled device (CCD). Realistic simulations were carried out to assess the model at different transfer times and for different sizes of the charge packet. A comparison was also made with an analytical model and the results were quite close. Simulations of the input and the output stages of the device were also examined. The key advantages of the equivalent circuit model appeared to be substantial reduction in the computing time in addition to its primary use in a circuit simulator
  • Keywords
    III-V semiconductors; charge-coupled devices; digital simulation; equivalent circuits; gallium arsenide; semiconductor device models; CCD; GaAs; GaAs charge coupled device; charge packet; charge transfer mechanisms; circuit simulator; computing time; equivalent circuit model; input stages; output stages; transfer times;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    250006