Title :
Low-threshold lasers fabricated by alignment-free impurity induced disordering
Author :
Floyd, P.D. ; Chao, C.P. ; Law, K.-K. ; Merz, J.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
An Si/SiN/sub x//Si trilayer diffusion source and mask is described and applied to an alignment-free process for fabricating lasers by impurity-induced disordering (IID). Edge-emitting lasers with continuous wave threshold currents of 4.8 mA were achieved, and folded-cavity surface-emitting lasers with Si disordered waveguides were demonstrated for the first time with a threshold of 11 mA. The process that makes possible self-aligned-metallization on a diffusion defined stripe will be useful in fabricating narrow stripe IID lasers and simplify processing for integration of IID waveguide devices.<>
Keywords :
current density; impurities; masks; metallisation; optical waveguides; optical workshop techniques; semiconductor lasers; 11 mA; 4.8 mA; AlGaAs:Si-AlGaAs:Be; Si-SiN-Si; Si/SiN/sub x//Si trilayer diffusion source; alignment-free impurity induced disordering; continuous wave threshold currents; diffusion defined stripe; edge-emitting lasers; folded-cavity surface-emitting lasers; integration; laser fabrication; low-threshold lasers; mask; narrow stripe IID lasers; self-aligned-metallization; Etching; Gallium arsenide; Impurities; Metallization; Optical device fabrication; Optical materials; Quantum well lasers; Surface emitting lasers; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
