• DocumentCode
    987705
  • Title

    Development in High-Speed Switching Elements

  • Author

    Lo, Arthur W.

  • Author_Institution
    Components Division, IBM Corp., Poughkeepsie, N.Y.
  • Volume
    50
  • Issue
    5
  • fYear
    1962
  • fDate
    5/1/1962 12:00:00 AM
  • Firstpage
    1067
  • Lastpage
    1072
  • Abstract
    Recent developments in high-speed switching elements are outlined to indicate the trend of recent work and thoughts on physical implementation of high-speed digital data processing systems. Four outstanding switching elements, thin film cryotron, high-speed transistor, microwave parametric phase-locked oscillator, and tunnel diode, as well as some related circuit and fabrication techniques, are briefly described and commented on. The transistor remains as the predominant switching element for these systems, largely because of the vast experience with it. The other technologies are presenting an ever increasing challenge to the transistor in this area.
  • Keywords
    Data processing; Diodes; Fabrication; Microwave circuits; Microwave oscillators; Microwave theory and techniques; Microwave transistors; Switching circuits; Thin film circuits; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1962.288007
  • Filename
    4066816