Title :
Highly stable FET DROs using new linear dielectric resonator material
Author :
Tsironis, Christos ; Hennings, D.
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
New low-loss dielectric materials for dielectric resonator oscillators (DROs) have been developed. The new barium titanate material has positive and constant stability factor (3 to 10 ppm/K) and quality factors of about 2500. The achieved frequency drift of GaAs FET DROs using dielectric resonators made from the new material over ¿30 to 80°C is of the order of 150 to 200 kHz at 10.9 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; barium compounds; ceramics; frequency stability; gallium arsenide; microwave oscillators; resonators; solid-state microwave circuits; -30 to 80degrees C; Ba2Ti9O20; BaTi4O9; BaTiO3; GaAs FET; III-V semiconductors; MESFET; SHF; constant stability factor; dielectric resonator; frequency drift; low-loss dielectric materials; sintered two-phasing ceramic; stabilised microwave oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830505
