• DocumentCode
    988044
  • Title

    Highly stable FET DROs using new linear dielectric resonator material

  • Author

    Tsironis, Christos ; Hennings, D.

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    19
  • Issue
    18
  • fYear
    1983
  • Firstpage
    741
  • Lastpage
    743
  • Abstract
    New low-loss dielectric materials for dielectric resonator oscillators (DROs) have been developed. The new barium titanate material has positive and constant stability factor (3 to 10 ppm/K) and quality factors of about 2500. The achieved frequency drift of GaAs FET DROs using dielectric resonators made from the new material over ¿30 to 80°C is of the order of 150 to 200 kHz at 10.9 GHz.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; barium compounds; ceramics; frequency stability; gallium arsenide; microwave oscillators; resonators; solid-state microwave circuits; -30 to 80degrees C; Ba2Ti9O20; BaTi4O9; BaTiO3; GaAs FET; III-V semiconductors; MESFET; SHF; constant stability factor; dielectric resonator; frequency drift; low-loss dielectric materials; sintered two-phasing ceramic; stabilised microwave oscillator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830505
  • Filename
    4248010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=988044