Title :
Drain Breakdown Voltage in MuGFETs: Influence of Physical Parameters
Author :
Lee, Chi Woo ; Afzalian, Aryan ; Yan, Ran ; Akhavan, Nima Dehdashti ; Xiong, Weize ; Colinge, Jean-Pierre
Author_Institution :
Tyndall Nat. Inst., Cork
Abstract :
This paper analyzes the drain breakdown voltage of multigate MOSFETs and the influence of parameters such as doping concentration, fin width, and gate length. The good electrostatic control of the active area by the multigate structure improves the drain breakdown voltage, which increases as the fin width is decreased. Increasing the channel doping concentration improves the drain breakdown voltage as well.
Keywords :
MOSFET; electrostatics; impact ionisation; semiconductor device breakdown; semiconductor doping; silicon-on-insulator; MuGFET; Si-SiO2; channel doping concentration; doping concentration; drain breakdown voltage; electrostatic control; fin width; gate length; impact ionization; multigate MOSFET; physical parameters; silicon-on-insulator MOSFET; Boron; CMOS process; Doping; Electric breakdown; Electrodes; Etching; Impact ionization; Lithography; MOSFETs; Silicon on insulator technology; Breakdown voltage; floating-body effects; impact ionization; multiple-gate MOSFET (MuGFET); silicon-on-insulator (SOI);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2006546
