Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory

Author

Mahalanabis, Debayan ; Barnaby, H.J. ; Kozicki, M.N. ; Bharadwaj, Vineeth ; Rajabi, Saba

Author_Institution

Sch. of Electr., Arizona State Univ., Tempe, AZ, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3557

Lastpage

3563

Abstract

Programmable metallization cell (PMC) devices belong to a class of non-volatile ionic resistive memory devices that have already demonstrated tolerance to high total doses of ionizing radiation. In this work, the susceptibility of integrated 1T-1R PMC memory array to ion strike induced single event upsets is analyzed. Circuit simulations that model single event transients in 1T-1R elements are performed using a PMC compact model which captures the voltage driven resistance change mechanism experimentally observed in such devices. The relationship between incident ion LET and change in PMC resistance and its consequent susceptibility to an upset is investigated through both simulation and experiment.

Keywords

radiation hardening (electronics); resistive RAM; PMC resistance; integrated 1T-1R PMC memory array; ion strike; ionizing radiation; linear energy transfer; nonvolatile ionic resistive memory device; programmable metallization cell memory; single event induced soft error; single event transients; single event upsets; Integrated circuit metallization; Integrated circuit modeling; Random access memory; Resistance; Single event transients; Single event upsets; Transient analysis; Chalcogenide; electrochemical memory cell; nano-ionic memory; programmable metallization cells (PMCs); radiation effects; resistive RAM (ReRAM); single event effects; single event transients; single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2358235

Filename

6935043