Title :
Yield optimization of modular and redundant multimegabit RAMs: a study of effectiveness of coding versus static redundancy using the center-satellite model
Author :
Sharma, Debendra Das ; Meyer, Fred J. ; Pradhan, Dhiraj K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Abstract :
To determine the optimal redundancy organization for yield enhancement, redundant and modular memories are analyzed using the center-satellite model. The model suggests that the degree of redundancy for a memory module be determined according to its distance from the periphery of the wafer since the defect density increases as the periphery is neared. Analytical expressions are formulated for the yield of memory modules with extra rows and/or extra columns, coding, and coding with extra rows. Results from the analysis suggest that, for high levels of defect densities, coding can be more effective than simple extra rows and columns. For high levels of defect densities, coding with extra rows is shown to offer even better yield. For low levels of defect densities, though, just extra rows and columns may be sufficient for a high yield. An optimal amount of redundancy can be found to achieve the highest possible yield using the model that considers precise cluster distributions on the wafer, defects in a cluster, and the radial variation of these defects.<>
Keywords :
VLSI; integrated memory circuits; random-access storage; redundancy; semiconductor process modelling; VLSI; center-satellite model; coding; coding effectiveness; defect density; extra columns; extra rows; modular multimegabit RAMs; precise cluster distributions; radial variation; redundant multimegabit RAMs; static redundancy; wafer periphery; yield optimization; DH-HEMTs; Physics; Prototypes; Random access memory; Read-write memory; Redundancy; Semiconductor device manufacture; Semiconductor device modeling; Semiconductor devices; Very large scale integration;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on