Title :
Wide band-gap power semiconductor devices
Author_Institution :
CNM-CSIC, Univ. Autonoma de Barcelona, Barcelona
fDate :
10/1/2007 12:00:00 AM
Abstract :
The recent progress in the development of high-voltage SiC, GaN and diamond power devices is reviewed. Topics covered include the performance of various rectifiers and switches, material and process technologies of these wide band-gap semiconductor devices and future trends in device development and industrialisation.
Keywords :
power semiconductor devices; wide band gap semiconductors; GaN; SiC; industrialisation; wide band-gap power semiconductor devices;
Journal_Title :
Circuits, Devices & Systems, IET
DOI :
10.1049/iet-cds:20070005
