• DocumentCode
    989144
  • Title

    Integrated PINFET optical receiver with high-frequency InP-MISFET

  • Author

    Kasahara, K. ; Sugimoto, M. ; Nomura, H. ; Suzuki, S.

  • Author_Institution
    NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    19
  • Issue
    22
  • fYear
    1983
  • Firstpage
    905
  • Lastpage
    906
  • Abstract
    Monolithic integration of an InGaAsP PIN photodiode with an n-channel enhancement InP-MISFET is reported. Photo-current amplification characteristics at 1000 Mbit/s have been achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; monolithic integrated circuits; optical communication equipment; photodiodes; preamplifiers; 1000 Mbit/s; InGaAsP PIN photodiode; integrated PINFET optical receiver; integrated optoelectronics; monolithic integration; n-channel enhancement InP-MISFET; photocurrent amplification characteristics; preamplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830618
  • Filename
    4248151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989144