Title :
140 GHz 70 mW CW output power with n-type silicon single-drift impatt diodes
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Abstract :
Silicon single-drift-region impatt diodes designed to operate at D-band frequencies were fabricated with a p+ nn+ structure formed by thermal diffusion of boron. A continuous-wave output power of 70 mW at 137 GHz with a conversion efficiency of 3.2% was obtained. The diodes were packaged with a quartz standoff configuration on a copper heatsink and mounted into a cap-type waveguide resonator.
Keywords :
IMPATT diodes; elemental semiconductors; silicon; 137 GHz; 140 GHz; 70 mW CW output power; B thermal diffusion; Cu heatsink; D-band frequencies; cap-type waveguide resonator; continuous-wave output power; conversion efficiency; microwave device; n-Si; p+-n-n+ structure; quartz standoff configuration; single-drift IMPATT diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830620
