• DocumentCode
    989221
  • Title

    Frequency dispersion of transconductance and output resistance in GaAs MESFETs with low-temperature-grown GaAs passivation layers

  • Author

    Chen, C.L. ; Smith, F.W. ; Mahoney, L.J. ; Manfra, Michael J. ; Calawa, A.R.

  • Author_Institution
    MIT, Cambridge, MA, USA
  • Volume
    29
  • Issue
    5
  • fYear
    1993
  • fDate
    3/4/1993 12:00:00 AM
  • Firstpage
    499
  • Lastpage
    501
  • Abstract
    High-resistivity GaAs grown at low temperatures by molecular beam epitaxy was used as the surface passivation layer of MESFETs. When these MESFETs are biased in the saturation region, the frequency dispersions of the transconductance and output resistance are reduced compared to those of a MESFET without a passivation layer.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; passivation; semiconductor epitaxial layers; semiconductor growth; GaAs; GaAs passivation layers; MBE; MESFET; frequency dispersions; low-temperature-grown; molecular beam epitaxy; output resistance; saturation region; surface passivation; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930334
  • Filename
    250299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989221