Optoelectronic integration: A technology for future telecommunication systems

Author

Leheny, R.F.

Volume

5

Issue

3

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

38

Lastpage

41

Abstract

An overview is given of research on optoelectronic integrated circuits (OEICs) since the late 1970s. The current state of OEICs for telecommunication applications is examined. The quaternary alloy material InGaAsP, which can be grown lattice matched to InP, is the material of choice for fabricating emitters and detectors. Because these materials do not lend themselves to a simple MESFET technology, there has been extensive research into alternative electronic device structures such as MISFETs, JFETs, and heterojunction bipolar transistors for integration with optical devices. Problems that remain to be solved are identified.<>

Keywords

heterojunction bipolar transistors; insulated gate field effect transistors; integrated optoelectronics; junction gate field effect transistors; telecommunication equipment; InGaAsP; JFETs; MESFET; MISFETs; OEICs; heterojunction bipolar transistors; optoelectronic integrated circuits; telecommunication systems; Detectors; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; JFETs; Lattices; MESFETs; MISFETs; Optical devices; Optical materials;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/101.25030

Filename

25030