InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging

Author

Djie, Hery Susanto ; Dimas, Clara E. ; Wang, Dong-Ning ; Ooi, Boon-Siew ; Hwang, James C M ; Dang, Gerard T. ; Chang, Wayne H.

Author_Institution

Electr. & Comput. Eng, Lehigh Univ., Bethlehem, PA

Volume

7

Issue

2

fYear

2007

Firstpage

251

Lastpage

257

Abstract

We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light sources; optical fabrication; optical sensors; optical tomography; semiconductor growth; semiconductor quantum dots; superluminescent diodes; 1210 nm; InGaAs-GaAs; broadband light source; optical coherence tomography; optical feedback oscillation; optical imaging; optical sensor; photon absorber; quantum dots; superluminescent diodes; Gallium arsenide; Indium gallium arsenide; Optical device fabrication; Optical feedback; Optical imaging; Optical sensors; Optoelectronic and photonic sensors; Quantum dots; Superluminescent diodes; Wideband; Broadband light source; optical coherence tomography (OCT); quantum dot (QD); superluminescent diode;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2006.886884

Filename

4066971