• DocumentCode
    989343
  • Title

    Zero-temperature-coefficient (ZTC) biasing of power VDMOS transistors

  • Author

    Prijic, Zoran ; Pavlovic, Zoran ; Ristic, Sonja ; Stojadinovic, Ninoslav

  • Author_Institution
    Nis Univ., Yugoslavia
  • Volume
    29
  • Issue
    5
  • fYear
    1993
  • fDate
    3/4/1993 12:00:00 AM
  • Firstpage
    435
  • Lastpage
    437
  • Abstract
    It is shown that, in contrast to conventional MOSFETs power VDMOS transistors exhibit a unique ZTC point only in the saturation region of operation. Also, an analytical expression for the gate voltage for the ZTC biasing of power VDMOS transistors, leading to excellent agreement with experimental data, is derived.
  • Keywords
    insulated gate field effect transistors; power transistors; 300 to 473 K; ZTC biasing; drain current; gate bias; gate voltage; high temperature operation; power VDMOS transistors; saturation region; transfer characteristics; zero temperature coefficient biasing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930291
  • Filename
    250311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989343