• DocumentCode
    989469
  • Title

    Triggering pulse durations in transferred electron devices

  • Author

    Carruthers, T.F. ; Weller, J.F.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    19
  • Issue
    23
  • fYear
    1983
  • Firstpage
    955
  • Lastpage
    956
  • Abstract
    Pairs of 1.0 ps optical pulses, each focused onto a different region of a planar GaAs transferred electron device, were separated by a variable delay time ¿ to initiate and then inhibit dipole domain formation. The minimum pulse durations which could trigger domains were thus observed; the minimum value of ¿ which generated domains in the device studied was 7 ± 3 ps.
  • Keywords
    Gunn devices; III-V semiconductors; gallium arsenide; GaAs; III-V semiconductors; TEDs; dipole domain formation; optical pulses; pulse durations; transferred electron devices; variable delay time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830649
  • Filename
    4248187