High performance scaled flash-type EEPROMs fabricated by in situ multiple rapid thermal processing

Author

Hayashi, Teruaki ; Fukuda, Hiroshi ; Iwabuchi, T.

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

29

Issue

25

fYear

1993

Firstpage

2178

Lastpage

2179

Abstract

Flash-type EEPROMs were fabricated for the first time by in situ multiple rapid thermal processing (RTP) modules. In the paper, rapid thermal oxynitridation tunnel oxide (RTONO) formation followed by in situ arsenic (As)-doped floating gate polysilicon growth by rapid thermal chemical vapour deposition (RTCVD) were introduced. The flash cell indicates only 20% narrowing of the V_t window after 5*10⁴ program/erase cycle stress. Moreover, there is a higher breakdown field of the ONO film on the floating-gate polysilicon film owing to extremely flat poly-Si surface. Thus, the in situ multiple RTP technology is the key for future flash memory fabrication processes.

Keywords

EPROM; chemical vapour deposition; integrated circuit technology; integrated memory circuits; rapid thermal processing; As-doped floating gate polysilicon growth; ONO film; Si:As; fabrication processes; flash memory; floating-gate polysilicon film; multiple rapid thermal processing; poly-Si surface; rapid thermal chemical vapour deposition; rapid thermal oxynitridation tunnel oxide formation; scaled flash-type EEPROM;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19931462

Filename

250339