Title :
Screening of long-wavelength laser at high temperature and high current levels
Author :
Higuchi, H. ; Oomura, E. ; Hirano, R. ; Sakakibara, Y. ; Namizaki, H. ; Susaki, W. ; Fujikawa, K.
Author_Institution :
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Abstract :
It is found that electroluminescent mode aging at high-temperature and high-current levels is useful for selecting long-lived InGaAsP 1.3 ¿m lasers. Lasers selected by this screening have little change in threshold current or forward voltage through the aging test at an elevated temperature with constant light-output power.
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; laser modes; optical testing; semiconductor junction lasers; 1.3 micron; III-V semiconductors; InGaAsP; aging test; constant light-output power; electroluminescent mode aging; forward voltage; high temperature; high-current levels; screening; semiconductor junction lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830663
