• DocumentCode
    989629
  • Title

    Screening of long-wavelength laser at high temperature and high current levels

  • Author

    Higuchi, H. ; Oomura, E. ; Hirano, R. ; Sakakibara, Y. ; Namizaki, H. ; Susaki, W. ; Fujikawa, K.

  • Author_Institution
    Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
  • Volume
    19
  • Issue
    23
  • fYear
    1983
  • Firstpage
    976
  • Lastpage
    977
  • Abstract
    It is found that electroluminescent mode aging at high-temperature and high-current levels is useful for selecting long-lived InGaAsP 1.3 ¿m lasers. Lasers selected by this screening have little change in threshold current or forward voltage through the aging test at an elevated temperature with constant light-output power.
  • Keywords
    III-V semiconductors; ageing; gallium arsenide; indium compounds; laser modes; optical testing; semiconductor junction lasers; 1.3 micron; III-V semiconductors; InGaAsP; aging test; constant light-output power; electroluminescent mode aging; forward voltage; high temperature; high-current levels; screening; semiconductor junction lasers; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830663
  • Filename
    4248206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989629