• DocumentCode
    989695
  • Title

    High-performance singlemode InGaNAs/GaAs laser

  • Author

    Peng, C.S. ; Laine, N. ; Konttinen, J. ; Karirinne, S. ; Jouhti, T. ; Pessa, M.

  • Author_Institution
    Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
  • Volume
    40
  • Issue
    10
  • fYear
    2004
  • fDate
    5/13/2004 12:00:00 AM
  • Firstpage
    604
  • Lastpage
    605
  • Abstract
    Performance characteristics of an InGaNAs/GaAs ridge-waveguide in-plane laser diode, which is grown by molecular beam epitaxy, are reported. The laser emits at a wavelength of 1.262 μm in a single lateral mode, launching an output up to 240 mW at 20°C and 20 mW at 120°C. The threshold is 15 mA at 20°C, corresponding to a threshold current density of 313 A/cm2.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; laser modes; molecular beam epitaxial growth; quantum well lasers; 1.262 micron; 120 C; 120 degC; 20 degC; 20 mW; 240 mW; InGaNAs-GaAs; InGaNAs/GaAs ridge waveguide in plane laser diode; high performance singlemode InGaNAs/GaAs laser; laser emission; molecular beam epitaxial growth; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040388
  • Filename
    1300284
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989695