Structure of GaAs-Ga1-xAlxAs superlattices grown by metal-organic chemical vapour deposition

Author

Griffiths, R.J.M. ; Chew, N.G. ; Cullis, A.G. ; Joyce, G.C.

Author_Institution

Royal Signals & Radar Establishment, Electronic Materials Division, Great Malvern, UK

Volume

19

Issue

23

fYear

1983

Firstpage

988

Lastpage

990

Abstract

A computer-controlled metal-organic chemical vapour deposition system employing a fast-switching gas manifold has been used to prepare GaAs-Ga1-xAlxAs superlattice structures. A combination of cross-sectional transmission electron microscopy and Auger and secondary ion mass spectrometry sputter profiling have allowed accurate measurements to be made of layer thickness and GaAs-Ga1-xAlxAs interface widths. Layers as thin as 15 Ã… have been observed and interface widths less than 20 Ã… measured.

Keywords

Auger effect; CVD coatings; III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; interface structure; secondary ion mass spectroscopy; semiconductor growth; semiconductor superlattices; transmission electron microscope examination of materials; Auger effect; GaAs-Ga1-xAlxAs; III-V semiconductors; MOCVD; SIMS; TEM; chemical vapour deposition; computer-controlled system; cross-sectional transmission electron microscopy; fast-switching gas manifold; layer thickness; metalorganic CVD; secondary ion mass spectrometry sputter profiling; semiconductor growth; superlattices;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19830671

Filename

4248216