• DocumentCode
    989865
  • Title

    Optically-biased, edge-coupled InP/InGaAs heterojunction phototransistors

  • Author

    Wake, D. ; Newson, D.J. ; Henning, I.D.

  • Author_Institution
    British Telecom Res. Labs., Ipswich, UK
  • Volume
    29
  • Issue
    25
  • fYear
    1993
  • Firstpage
    2217
  • Lastpage
    2219
  • Abstract
    InP/GaAs heterojunction phototransistors are reported with high DC gain (greater than 270) and high unity-gain frequency (greater than 30GHz). To the authors´ knowledge, these are the highest performance heterojunction phototransistors reported to date. This performance is achieved by a combination of edge-coupled optical access and a two-terminal, optically-biased design. This design allows efficient, small area devices with low parasitics to be produced with a simple fabrication scheme.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; phototransistors; 30 GHz; InP-InGaAs; InP/InGaAs; edge-coupled optical access; fabrication scheme; heterojunction phototransistors; high DC gain; high unity-gain frequency; low parasitics; optically-biased design; small area devices; two-terminal;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931489
  • Filename
    250364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989865