• DocumentCode
    989889
  • Title

    Enhancement and depletion-mode AlGaAs-In0.15Ga0.85As HEMTs fabricated by selective ion implantation

  • Author

    Chan, Y.-J. ; Yang, Mau-Tsuen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    29
  • Issue
    25
  • fYear
    1993
  • Firstpage
    2220
  • Lastpage
    2222
  • Abstract
    Enhancement- and depletion-mode AlGaAs/In0.15Ga0.85As HEMTs were fabricated on the same wafer by the selective ion implantation technique. This implantation results in extra carriers in the area of D-HEMTs, and therefore E- and D-HEMTs can be realised simultaneously after a single gate lithography step. As compared with the conventional approach, this selective ion implantation provides a convenient method for implementing E/D-mode logic circuits for high-speed and low-power applications.
  • Keywords
    III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; ion implantation; 1 mum; AlGaAs-In 0.15Ga 0.85As; AlGaAs-In 0.15Ga 0.85As HEMTs; D-HEMTs; DC I-V transfer characteristics; E-HEMTs; HEMT inverter; depletion-mode HEMTs; enhancement-mode HEMTs; gate length; high-speed applications; logic circuits; low-power applications; selective ion implantation; single gate lithography step;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931491
  • Filename
    250366
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989889