• DocumentCode
    990179
  • Title

    Low-pressure MOVPE growth of Sn-doped GaAs

  • Author

    Roth, A.P. ; Yakimova, R. ; Sundaram, V.S.

  • Author_Institution
    National Research Council, Semiconductor Research Group Division of Chemistry, Ottawa, Canada
  • Volume
    19
  • Issue
    25
  • fYear
    1983
  • Firstpage
    1062
  • Lastpage
    1064
  • Abstract
    Sn-doped GaAs layers have been grown by low pressure MOVPE. For carrier concentrations n ¿ 1.5 × 1019 cm¿3, the layers are characterised by good surface morphology, high mobility and negligible compensation. At higher carrier concentration, the surface morphology deteriorates and Sn surface accumulation is detected by AES.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; semiconductor doping; semiconductor growth; tin; vapour phase epitaxial growth; AES; GaAs:Sn; MOVPE growth; Sn surface accumulation; carrier concentrations; high mobility; low pressure metalorganic vapour phase epitaxy; semiconductor growth; surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830721
  • Filename
    4248278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990179