DocumentCode :
990263
Title :
Highly Stable 1.3- \\mu\\hbox {m} -Wavelength Lasers With p- and n-InP Buried Heterostructure
Author :
Takeshita, Tatsuya ; Ito, Tsuyoshi ; Sugo, Mitsuru ; Kato, Kazutoshi
Author_Institution :
Nippon Telegraph & Telephone (NTT) Photonics Labs., NTT Corp., Atsugi
Volume :
8
Issue :
3
fYear :
2008
Firstpage :
576
Lastpage :
581
Abstract :
Highly stable 1.3-mum-wavelength Fabry-Perot lasers with a p- and n-type InP buried heterostructure have been achieved at an ambient temperature of 85 degC. The t 0.5 deterioration (second-stage degradation) property does not appear clearly within 6000 h, and the saturated first-stage degradation property remains. It is confirmed that the fabricated 1.3-mum FP lasers have a different optical-beam-induced-current characteristic from lasers suffering from t 0.5 deterioration. The first-stage degradation is due to the deterioration of the active layer and is attributed to the fact that some nonradiative recombination centers are generated in the active layer.
Keywords :
III-V semiconductors; indium compounds; semiconductor lasers; Fabry-Perot lasers; InP; active layer deterioration; buried heterostructure; first stage degradation; highly stable lasers; nonradiative recombination center; temperature 85 C; wavelength 1.3 mum; Degradation; Distributed feedback devices; Fiber lasers; Laser modes; Optical saturation; Power lasers; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers; Aging; failure analysis; indium compounds; laser reliability; photon beams; quantum-well lasers; semiconductor lasers;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2008.2000894
Filename :
4675188
Link To Document :
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