Low threshold current GaAs/GaAlAs GRIN-SCH stripe lasers grown by OMVPE

Author

Krakowski, M. ; Hirtz, P. ; Blondeau, R. ; Hersee, S.D. ; Baldy, M. ; de Cremoux, B. ; Duchemin, J.P.

Author_Institution

Thomson-CSF, Laboratoire Central de Recherches, Orsay, France

Volume

19

Issue

25

fYear

1983

Firstpage

1082

Lastpage

1084

Abstract

The letter describes the characteristics of stripe lasers formed in GaAs/GaAlAs single-quantum-well graded-composition separate-confinement heterostructures (GRIN-SCH) grown by low-pressure organometallic vapour phase epitaxy (LP-OMVPE). We show that the low threshold current density that has been achieved with the GRIN-SCH structure allows low threshold currents (38 mA) to be achieved in a simple gain-guided stripe-geometry laser. These low thresholds have been obtained without resorting to a complex nonplanar (lower yield) technology, and it is shown that the good uniformity offered by OMVPE is maintained through to the mounted device stage.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GRIN-SCH; GaAs/GaAlAs; OMVPE; gain-guided stripe-geometry laser; low threshold current density; low-pressure organometallic vapour phase epitaxy; semiconductor laser; single-quantum-well graded-composition separate-confinement heterostructures; stripe lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19830734

Filename

4248294