Title :
Linewidth enhancement factor for quantum-well lasers
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
The linewidth enhancement factor ¿ is calculated for an idealised GaInAs quantum-well laser. Values between 1 and 2 are found for a range of possible lasing energies. Somewhat larger values are expected for GaInAs quantum wells with InP barriers. It is concluded that dramatic reductions in ¿ are not to be expected for quantum wells.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAs quantum-well laser; III-V semiconductors; InP barriers; lasing energies; linewidth enhancement factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840020
