Title :
An Analytical Model for the Ordered Nanopore Array Diode Laser
Author :
Verma, Varun Boehm ; Elarde, Victor G. ; Coleman, James J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL
Abstract :
In this work, we present an analytical model describing the density of states and spectral behavior of the ordered nanopore array diode laser. The nanopore structure consists of an ordinary quantum well perturbed by a periodic lattice of energy barriers. It is shown that such a perturbation leads to the formation of energy subbands in both the conduction and valence bands. The theoretically predicted gain spectrum shows excellent agreement with experimental results. Finally, the unique effects of in-plane quantization and periodicity on the intersubband selection rules are described in detail.
Keywords :
III-V semiconductors; conduction bands; electronic density of states; gallium arsenide; indium compounds; nanoporous materials; perturbation theory; quantum well lasers; valence bands; In0.25Ga0.75As-GaAs; conduction band; density of states; energy barriers; energy subband formation; in-plane quantization; intersubband selection rules; nanopore structure; ordered nanopore array diode laser; ordinary quantum well; periodicity; perturbation; quantum-well lasers; semiconductor lasers; valence band; Analytical models; Diode lasers; Lattices; Nanoporous materials; Optical arrays; Periodic structures; Photonic crystals; Quantum dot lasers; Quantum well lasers; Semiconductor laser arrays; Quantum dots; quantum-well lasers; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2008.2004749
