Iterative determination of oxide thickness in MOS structures from one DC current/voltage pair

A simple iterative technique which enables the silicon dioxide thickness to be determined using Fowler-Nordheim tunnelling measurements is described. It is shown that by assuming the accepted values of the Fowler-Nordheim tunnelling constants only one DC current/voltage pair is required to obtain the thickness. The thicknesses obtained in this way are shown to be in good agreement with ellipsometer and high-frequency capacitance measurements over the range 70¿350 Å.