Title :
Temperature effects on high-gain photoconductive detectors
Author :
Vilcot, J.P. ; Vaterkowski, J.L. ; Decoster, D. ; Constant, M.
Author_Institution :
Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´Ascq, France
Abstract :
In the letter we report gain measurements on N-type GaAs planar photoresistors which have been performed against temperature, for various light powers. A strong dependence of gain on temperature has been shown and interpreted in terms of trapping effects.
Keywords :
III-V semiconductors; electric sensing devices; gallium arsenide; hole traps; photoconducting devices; photodetectors; photoresistors; GaAs; III-V semiconductors; electric sensing devices; gain measurements; hole traps; n-type; photoconductive detectors; planar photoresistors; temperature dependence; trapping effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840060
