Title :
Characteristics of RF-sputtered CoCr films
Author :
Wielinga, T. ; Lodder, J.C. ; Worst, J.
Author_Institution :
Twente University of Technology, Enschede, The Netherlands
fDate :
11/1/1982 12:00:00 AM
Abstract :
The magnetization of the CoCr recording medium has been investigated by several methods. First the perpendicular hysteresis loops are analysed in the thickness range from 500 to 20,000 Å. This provided evidence that the magnetization process is typefied by domain wall motion. Second the dependence of the coercivity on the film thickness has been determined. The dependence found can be explained if it is assumed, that the coercivity is caused by domain walls, impeded by the crystallite boundaries. Finally stand-still recording experiments have been performed, which confirm that magnetization takes place by the displacement of domain walls. The switching criterion in the writing process is best met by taking the field averaged over the film thickness.
Keywords :
Magnetic films/devices; Sputtering; Anisotropic magnetoresistance; Coercive force; Crystallization; Magnetic domain walls; Magnetic films; Magnetic hysteresis; Magnetic properties; Magnetization; Perpendicular magnetic recording; Semiconductor films;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1982.1062152