Advanced SPICE modeling of large power IGBT modules

Author

Azar, Ramy ; Udrea, Florin ; De Silva, Mahesh ; Amaratunga, Gehan ; Ng, Wai Tung ; Dawson, Francis ; Findlay, W. ; Waind, Peter

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

40

Issue

3

fYear

2004

Firstpage

710

Lastpage

716

Abstract

An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady-state and transient measurements done on an 800-A 1.7-kV Dynex IGBT module at 25°C and 125°C. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations. The Spice model also takes into account for the first time the parasitic thyristor effect allowing the dc and dynamic temperature-dependent latchup modeling of power modules as well as their temperature-dependent safe operating area.

Keywords

SPICE; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; 1.7 kV; 125 degC; 25 degC; 800 A; DMOS structures; Dynex module; IGBT modules; Kraus model; SPICE modeling; insulated gate bipolar transistor; latchup modeling; p-i-n injection; parasitic thyristor effect; power modules; safe operating area; temperature dependence; trench structures; Immune system; Industry Applications Society; Insulated gate bipolar transistors; Medical simulation; P-i-n diodes; PIN photodiodes; SPICE; Semiconductor optical amplifiers; Temperature dependence; Thyristors; IGBT; Insulated gate bipolar transistor; PSPICE; model; trench IGBT simulation;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/TIA.2004.827456

Filename

1300723