Design of a block replicate gate for ion-implanted bubble devices

A block replicate gate has been designed for 4 μm period ion-implanted bubble devices. The gate consists of a conductor lying across a V-shaped unimplanted pattern between the minor loop end and the major line. Replication is accomplished by stretching the bubble with a stretch pulse through the conductor, cutting the domain by means of the charged wall formed at the edge of the V-shaped pattern together with a pulse of short duration, then restoring the bubble to the original condition by means of another stretch pulse. A bias field margin of 20 Oe was obtained with an error rate of 10^-5for a 100 kHz, 80 Oe peak triangular drive field.